Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 450mA
- Terminal Formu
- GULL WING
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 400m Ω @ 590mA, 10V
- Drain To Source Voltage Vdss
- 30V
- Terminal Pozisyonu
- DUAL
- Drainsource On Resistancemax
- 0.4Ohm
- Max Power Dissipation
- 310mW
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Input Capacitance Ciss Max Vds
- 55pF @ 15V
- Gate Charge Qg Max Vgs
- 1.4nC @ 10V
- Fet Type
- N and P-Channel
- Fabrika Tedarik Süresi
- 15 Weeks
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Pin Sayısı
- 6
- Montaj
- Surface Mount
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Vgsth Max Id
- 1.6V @ 250μA
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Sayısı
- 6
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 650mA 450mA
- JESD-609 Kodu
- e3
- Parça Durumu
- Active
- Fet Feature
- Standard
- Ds Breakdown Voltagemin
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2015
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