Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Obsolete
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2012
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 2
- Number Of Channels
- 2
- Current Continuous Drain Id25
- 6.9A 5A
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 4.1mm
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Additional Feature
- HIGH RELIABILITY
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Sayısı
- 8
- Vgsth Max Id
- 2.1V @ 250μA
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 30V
- Weight
- 850.995985mg
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Application
- SWITCHING
- Uzunluk
- 5.3mm
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- N and P-Channel
- Gate Charge Qg Max Vgs
- 8.6nC @ 10V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance Ciss Max Vds
- 384pF @ 15V
- Rds On Max Id Vgs
- 35m Ω @ 6.9A, 10V
- Drainsource On Resistancemax
- 0.035Ohm
- Terminal Pozisyonu
- DUAL
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 2W
- Pin Sayısı
- 8
- Pulsed Drain Currentmax Idm
- 30A
- Transistor Element Material
- SILICON
- Drain Currentmax Abs Id
- 6.9A
- Continuous Drain Current Id
- 5A
- Terminal Formu
- GULL WING
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