DMC3032LSD-13

Specifications

Gate Charge Qg Max Vgs

9.2nC @ 10V

Fet Type

N and P-Channel

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

404.5pF @ 15V

Max Power Dissipation

2.5W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Pin Sayısı

8

Rds On Max Id Vgs

32m Ω @ 7A, 10V

Drain To Source Voltage Vdss

30V

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

7A

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Yayın Yılı

2010

JESD-609 Kodu

e3

Fall Time Typ

22.2 ns

Parça Durumu

Active

Fet Feature

Logic Level Gate

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

8.1A 7A

Tepe Reflow Sıcaklığı (°C)

260

Number Of Channels

2

Turn Off Delay Time

50.1 ns

Number Of Elements

2

Vgsth Max Id

2.1V @ 250μA

Terminal Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Drain To Source Breakdown Voltage

-30V

ECCN Kodu

EAR99