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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 13.2nC @ 5V
- Fet Type
- N and P-Channel
- Reference Standard
- AEC-Q101
- Input Capacitance Ciss Max Vds
- 641pF @ 15V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Voltage Vdss
- 30V
- Terminal Pozisyonu
- DUAL
- Drainsource On Resistancemax
- 0.027Ohm
- Rds On Max Id Vgs
- 27m Ω @ 6A, 10V
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 1.2W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current Id
- 5.8A
- Drain Currentmax Abs Id
- 5.5A
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Ds Breakdown Voltagemin
- 30V
- Fet Feature
- Standard
- JESD-609 Kodu
- e3
- Parça Durumu
- Active
- Yayın Yılı
- 2000
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 2
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 5.5A 5.8A
- Montaj
- Surface Mount
- Pin Sayısı
- 8
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 3V @ 250μA
- Additional Feature
- HIGH RELIABILITY
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Sayısı
- 8
- Fabrika Tedarik Süresi
- 7 Weeks
- Transistor Application
- SWITCHING
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