DMC3026LSD-13

Specifications

Gate To Source Voltage Vgs

20V

Fet Type

N and P-Channel Complementary

Gate Charge Qg Max Vgs

6nC @ 4.5V, 10.9nC @ 4.5V

Power Max

1.6W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

641pF @ 15V 1241pF @ 15V

Rds On Max Id Vgs

25m Ω @ 6A, 10V, 28m Ω @ 6A, 10V

Drain To Source Voltage Vdss

30V

Terminal Pozisyonu

DUAL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

1.2W

Transistor Element Material

SILICON

Drain Currentmax Abs Id

6.5A

Continuous Drain Current Id

6.2A

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Parça Durumu

Active

Fall Time Typ

40.4 ns

JESD-609 Kodu

e3

Fet Feature

Standard

Ds Breakdown Voltagemin

30V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2014

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

2

Number Of Channels

2

Turn Off Delay Time

60.5 ns

Current Continuous Drain Id25

8.2A Ta 8A Ta

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101

Turn On Delay Time

9.7 ns

Pin Sayısı

8

Montaj

Surface Mount

Additional Feature

HIGH RELIABILITY

Terminal Kaplaması

Matte Tin (Sn)

Terminal Sayısı

8