Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 767pF @ 10V
- Gate Charge Qg Max Vgs
- 16.1nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Continuous Drain Current Id
- 8.5A
- Pin Sayısı
- 8
- Rds On Max Id Vgs
- 21m Ω @ 7A, 10V
- Terminal Pozisyonu
- DUAL
- Drain To Source Voltage Vdss
- 30V
- Current Continuous Drain Id25
- 8.5A 7A
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Turn Off Delay Time
- 50.1 ns
- Number Of Elements
- 2
- JESD-609 Kodu
- e3
- Ds Breakdown Voltagemin
- 30V
- Fet Feature
- Logic Level Gate
- Tepe Reflow Süresi (maks. sn)
- 40
- Weight
- 73.992255mg
- Power Dissipation
- 2.5W
- Transistor Application
- SWITCHING
- Additional Feature
- HIGH RELIABILITY
- Terminal Sayısı
- 8
- Vgsth Max Id
- 2.1V @ 250μA
- ECCN Kodu
- EAR99
- Pin Sayısı
- 8
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fet Type
- N and P-Channel
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 20V
- Kurşunsuz Kodu
- yes
- Terminal Formu
- GULL WING
- Yükseklik
- 1.5mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 2.5W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Genişlik
- 3.95mm
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