Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance Ciss Max Vds
- 631pF @ 15V
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 20V
- Gate Charge Qg Max Vgs
- 12.4nC @ 10V
- Fet Type
- N and P-Channel
- Drain Currentmax Abs Id
- 9.1A
- Continuous Drain Current Id
- 6A
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- yes
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yükseklik
- 1.5mm
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 20m Ω @ 6.9A, 10V
- Drain To Source Voltage Vdss
- 30V
- Terminal Pozisyonu
- DUAL
- Max Power Dissipation
- 2.5W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Pin Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 9.1A 6A
- Genişlik
- 4.1mm
- JESD-609 Kodu
- e3
- Parça Durumu
- Obsolete
- Fet Feature
- Logic Level Gate
- Ds Breakdown Voltagemin
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2011
- Radyasyon Dayanımı
- No
- Power Dissipation
- 2.5W
- Fabrika Tedarik Süresi
- 21 Weeks
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- 40
- Weight
- 850.995985mg
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