DMC2450UV-13

Specifications

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Vgsth Max Id

900mV @ 250μA

Additional Feature

HIGH RELIABILITY

Terminal Sayısı

6

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

260

Jesd30 Code

R-PDSO-F6

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

1.03A 700mA

Ds Breakdown Voltagemin

20V

Fet Feature

Standard

JESD-609 Kodu

e3

Parça Durumu

Active

Yayın Yılı

2015

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

1.03A

Drain Currentmax Abs Id

0.74A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

FLAT

Drain To Source Voltage Vdss

20V

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.7Ohm

Rds On Max Id Vgs

480m Ω @ 200mA, 5V

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

450mW

Reference Standard

AEC-Q101

Input Capacitance Ciss Max Vds

37.1pF @ 10V

Kılıf / Paket

SOT-563, SOT-666

Gate Charge Qg Max Vgs

0.5nC @ 4.5V