Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- SOT-563, SOT-666
- Input Capacitance Ciss Max Vds
- 37.1pF @ 10V
- Fet Type
- N and P-Channel
- Gate Charge Qg Max Vgs
- 0.5nC @ 4.5V
- Max Junction Temperature Tj
- 150°C
- Reach Svhc
- No SVHC
- Kurşunsuz Kodu
- yes
- Terminal Formu
- FLAT
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 600μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Surface Mount
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Continuous Drain Current Id
- 1.03A
- Max Power Dissipation
- 450mW
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 6
- Transistor Element Material
- SILICON
- Rds On Max Id Vgs
- 480m Ω @ 200mA, 5V
- Kurşunsuz
- Lead Free
- Terminal Pozisyonu
- DUAL
- Current Continuous Drain Id25
- 1.03A 700mA
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 1.25mm
- Number Of Elements
- 1
- Number Of Channels
- 2
- Turn Off Delay Time
- 13.74 ns
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2011
- Radyasyon Dayanımı
- No
- Parça Durumu
- Active
- Contact Plating
- Tin
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 16 Weeks
- Power Dissipation
- 450mW
- Uzunluk
- 1.7mm
- Additional Feature
- HIGH RELIABILITY
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