Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 500mW
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Sayısı
- 6
- Transistor Element Material
- SILICON
- Uzunluk
- 1.6mm
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 8V
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Genişlik
- 1.2mm
- Yükseklik
- 480μm
- Terminal Pozisyonu
- BOTTOM
- Input Capacitance Ciss Max Vds
- 150pF @ 16V
- Vgsth Max Id
- 1V @ 250μA
- Kılıf / Paket
- 6-SMD, No Lead
- Fet Type
- N and P-Channel
- Parça Durumu
- Active
- Current Continuous Drain Id25
- 750mA 600mA
- Weight
- 21.092045mg
- Pin Sayısı
- 6
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 16 Weeks
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2012
- Drain Currentmax Abs Id
- 0.75A
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drainsource On Resistancemax
- 0.55Ohm
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 550m Ω @ 540mA, 4.5V
- Drain To Source Breakdown Voltage
- 20V
- JESD-609 Kodu
- e4
- Pin Sayısı
- 6
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