DMC1030UFDBQ-7

Specifications

Seri

Automotive, AEC-Q101

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e4

Case Connection

DRAIN

Fet Feature

Standard

Terminal Formu

NO LEAD

Continuous Drain Current Id

5.1A

Additional Feature

HIGH RELIABILITY

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Yayın Yılı

2011

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.034Ohm

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

34m Ω @ 4.6A, 4.5V

Parça Durumu

Active

Number Of Elements

2

Fabrika Tedarik Süresi

15 Weeks

Gate Charge Qg Max Vgs

23.1nC @ 10V

Jesd30 Code

S-PDSO-N6

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ds Breakdown Voltagemin

12V

Power Max

1.36W

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application

SWITCHING

Max Power Dissipation

1.36W

Drain To Source Voltage Vdss

12V

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

1003pF @ 6V

Vgsth Max Id

1V @ 250μA

Fet Type

N and P-Channel Complementary

Kılıf / Paket

6-UDFN Exposed Pad