DMC1030UFDBQ-13

Specifications

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Power Max

1.36W

Ds Breakdown Voltagemin

12V

Parça Durumu

Active

Jesd30 Code

S-PDSO-N6

Gate Charge Qg Max Vgs

23.1nC @ 10V

Fabrika Tedarik Süresi

15 Weeks

Number Of Elements

2

Vgsth Max Id

1V @ 250μA

Kılıf / Paket

6-UDFN Exposed Pad

Fet Type

N and P-Channel Complementary

Terminal Sayısı

6

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

12V

Max Power Dissipation

1.36W

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance Ciss Max Vds

1003pF @ 6V

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

NO LEAD

Fet Feature

Standard

Case Connection

DRAIN

Additional Feature

HIGH RELIABILITY

Montaj

Surface Mount

Continuous Drain Current Id

5.1A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101

JESD-609 Kodu

e4

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

34m Ω @ 4.6A, 4.5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.034Ohm

RoHS Durumu

ROHS3 Compliant