Volume pricing
- 1+ pcs$0.97
- 10+ pcs$0.92
- 100+ pcs$0.87
- 500+ pcs$0.82
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Feature
- Standard
- Case Connection
- DRAIN
- Terminal Formu
- NO LEAD
- Continuous Drain Current Id
- 3.8A
- Montaj
- Surface Mount
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 6
- JESD-609 Kodu
- e4
- Rds On Max Id Vgs
- 29m Ω @ 5A, 4.5V
- ECCN Kodu
- EAR99
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 30
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.029Ohm
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- 260
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Ds Breakdown Voltagemin
- 12V
- Parça Durumu
- Active
- Gate Charge Qg Max Vgs
- 19.6nC @ 8V
- Number Of Elements
- 2
- Current Continuous Drain Id25
- 5.6A 3.8A
- Vgsth Max Id
- 1V @ 250μA
- Contact Plating
- Gold
- Fet Type
- N and P-Channel
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- 12V
- Max Power Dissipation
- 1.4W
- Terminal Pozisyonu
- DUAL
- Input Capacitance Ciss Max Vds
- 914pF @ 6V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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