DMC1029UFDB-13

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e4

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current Id

3.8A

Montaj

Surface Mount

Fet Feature

Standard

Case Connection

DRAIN

Terminal Formu

NO LEAD

Drainsource On Resistancemax

0.029Ohm

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2015

Drain Currentmax Abs Id

5.6A

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

29m Ω @ 5A, 4.5V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

S-PDSO-N6

Gate Charge Qg Max Vgs

19.6nC @ 8V

Fabrika Tedarik Süresi

15 Weeks

Number Of Elements

2

Current Continuous Drain Id25

5.6A 3.8A

Parça Durumu

Active

Ds Breakdown Voltagemin

12V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

914pF @ 6V

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Transistor Element Material

SILICON

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application

SWITCHING

Max Power Dissipation

1.4W

Drain To Source Voltage Vdss

12V

Fet Type

N and P-Channel

Kılıf / Paket

6-UDFN Exposed Pad

Vgsth Max Id

1V @ 250μA