DMC1028UVT-7

Specifications

Vgs Th Gatesource Threshold Voltage

1 V

Gate Charge Qg Max Vgs

18.5nC @ 8V, 11.5nC @ 8V

Rise Time

9.4 ns, 3.6 ns

Current Continuous Drain Id25

6.1A (Ta), 3.5A (Ta)

Qg Gate Charge

18.5 nC, 11.5 nC

Birim Ağırlık

0.000282 oz

Power Max

800mW

Technology

Si

Input Capacitance Ciss Max Vds

787pF @ 6V, 576pF @ 10V

Typical Turnon Delay Time

4.6 ns, 3.5 ns

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Drain To Source Voltage Vdss

12V, 20V

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Fet Type

N and P-Channel Complementary

Vds Drainsource Breakdown Voltage

12 V, 20 V

Rds On Drainsource Resistance

25 mOhms, 80 mOhms

Vgsth Max Id

1V @ 250μA

Montaj Stili

SMD/SMT

Paket

Tape & Reel (TR)

Channel Type

Complementary N and P Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Configuration

Dual

Number Of Channels

2 Channel

Fabrika Paket Adedi

3000

Transistor Type

1 N-Channel, 1 P-Channel

Continuous Drain Current Id

6.1A

Pd Power Dissipation

800 mW

Typical Turnoff Delay Time

15.7 ns, 20.8 ns

Id Continuous Drain Current

6.1 A, 3.5 A

Tedarikçi Cihaz Paketi

TSOT-26

Ürün Tipi

MOSFET

Fet Feature

Standard

Vgs Gatesource Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Montaj Tipi

Surface Mount

Ambalaj

MouseReel

Transistor Polarity

Complementary N and P Channel

Channel Mode

Enhancement

Rds On Max Id Vgs

25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V

Ürün Durumu

Active