DMC1028UVT-13

Specifications

Birim Ağırlık

0.000282 oz

Qg Gate Charge

18.5 nC, 11.5 nC

Power Max

800mW

Technology

Si

Gate Charge Qg Max Vgs

18.5nC @ 8V, 11.5nC @ 8V

Vgs Th Gatesource Threshold Voltage

1 V

Rise Time

9.4 ns, 3.6 ns

Current Continuous Drain Id25

6.1A (Ta), 3.5A (Ta)

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Fet Type

N and P-Channel Complementary

Vds Drainsource Breakdown Voltage

12 V, 20 V

Rds On Drainsource Resistance

25 mOhms, 80 mOhms

Vgsth Max Id

1V @ 250μA

Input Capacitance Ciss Max Vds

787pF @ 6V, 576pF @ 10V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Typical Turnon Delay Time

4.6 ns, 3.5 ns

Drain To Source Voltage Vdss

12V, 20V

Fabrika Paket Adedi

10000

Transistor Type

1 N-Channel, 1 P-Channel

Pd Power Dissipation

800 mW

Typical Turnoff Delay Time

15.7 ns, 20.8 ns

Ürün Tipi

MOSFET

Tedarikçi Cihaz Paketi

TSOT-26

Id Continuous Drain Current

6.1 A, 3.5 A

Fet Feature

Standard

Paket

Tape & Reel (TR)

Montaj Stili

SMD/SMT

Maks. Çalışma Sıcaklığı

+ 150 C

Configuration

Dual

Number Of Channels

2 Channel

Ürün Durumu

Active

Rds On Max Id Vgs

25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V

Vgs Gatesource Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Montaj Tipi

Surface Mount

Channel Mode

Enhancement

Ambalaj

Reel

Transistor Polarity

N-Channel, P-Channel