DMC1028UFDB-7

Specifications

Rds On Max Id Vgs

25m Ω @ 5.2A, 4.5V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2015

Drain Currentmax Abs Id

6A

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.025Ohm

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Feature

Standard

Case Connection

DRAIN

Terminal Formu

NO LEAD

Continuous Drain Current Id

3.4A

Montaj

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e4

Vgsth Max Id

1V @ 250μA

Fet Type

N and P-Channel

Kılıf / Paket

6-UDFN Exposed Pad

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

6

Transistor Element Material

SILICON

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application

SWITCHING

Max Power Dissipation

1.36W

Drain To Source Voltage Vdss

12V 20V

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

787pF @ 6V

Çalışma Sıcaklığı

-55°C~150°C TJ

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ds Breakdown Voltagemin

12V

Parça Durumu

Active

Jesd30 Code

S-PDSO-N6

Gate Charge Qg Max Vgs

18.5nC @ 8V

Fabrika Tedarik Süresi

15 Weeks

Number Of Elements

2

Current Continuous Drain Id25

6A 3.4A