DMC1028UFDB-13

Specifications

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

6A

Yayın Yılı

2015

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.025Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

25m Ω @ 5.2A, 4.5V

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e4

Case Connection

DRAIN

Fet Feature

Standard

Terminal Formu

NO LEAD

Continuous Drain Current Id

3.4A

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Sayısı

6

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain To Source Voltage Vdss

12V 20V

Max Power Dissipation

1.36W

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

787pF @ 6V

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

1V @ 250μA

Fet Type

N and P-Channel

Kılıf / Paket

6-UDFN Exposed Pad

Parça Durumu

Active

Fabrika Tedarik Süresi

15 Weeks

Gate Charge Qg Max Vgs

18.5nC @ 8V

Jesd30 Code

S-PDSO-N6

Number Of Elements

2

Current Continuous Drain Id25

6A 3.4A

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ds Breakdown Voltagemin

12V