DMC1018UPDWQ-13

Specifications

Qualification

AEC-Q101

Technology

Si

Qg Gate Charge

30.4 nC, 19 nC

Power Max

2.6W (Ta), 25W (Tc)

Vgs Th Gatesource Threshold Voltage

800 mV, 850 mV

Gate Charge Qg Max Vgs

30.4nC @ 8V, 19nC @ 8V

Current Continuous Drain Id25

10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)

Pin Sayısı

8

Rds On Drainsource Resistance

17 mOhms, 53 mOhms

Vgsth Max Id

1.5V @ 250μA

Kılıf / Paket

8-PowerTDFN

Fet Type

N and P-Channel Complementary

Vds Drainsource Breakdown Voltage

12 V, 20 V

Drain To Source Voltage Vdss

12V, 20V

Input Capacitance Ciss Max Vds

1525pF @ 6V, 866pF @ 6V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Id Continuous Drain Current

31.3 A, 20.9 A

Tedarikçi Cihaz Paketi

PowerDI5060-8 (Type UXD)

Fet Feature

Standard

Continuous Drain Current Id

31.3A

Pd Power Dissipation

25 W

Maks. Çalışma Sıcaklığı

+ 150 C

Seri

Automotive, AEC-Q101

Number Of Channels

2 Channel

Paket

Tape & Reel (TR)

Montaj Stili

SMD/SMT

Channel Type

N, P

Rds On Max Id Vgs

17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V

Ürün Durumu

Active

Package Type

PowerDI5060-8

Msl

MSL 1 - Unlimited

Montaj Tipi

Surface Mount

Channel Mode

Enhancement

Transistor Polarity

Complementary N and P Channel

Vgs Gatesource Voltage

- 8 V, + 8 V, - 12 V, + 12 V

Minimum Operating Temperature

- 55 C