Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Yayın Yılı
- 2007
- JESD-609 Kodu
- e3
- Kılıf / Paket
- SOT-563, SOT-666
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Yükseklik
- 600μm
- Genişlik
- 1.2mm
- Fabrika Tedarik Süresi
- 19 Weeks
- Parça Durumu
- Active
- Collector Emitter Voltage Vceo
- 40V
- Montaj Tipi
- Surface Mount
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 6
- Collectoremitter Breakdown Voltage
- 50V
- Terminal Sayısı
- 6
- Uzunluk
- 1.6mm
- Number Of Elements
- 2
- Continuous Collector Current
- 100mA
- Temel Parça No
- DDC122
- Weight
- 3.005049mg
- Polarity
- NPN
- Montaj
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- HTS Kodu
- 8541.21.00.75
- ECCN Kodu
- EAR99
- Transition Frequency
- 200MHz
- Max Collector Current
- 100mA
- Resistor Base R1
- 220 Ω
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 6
- Frequency Transition
- 200MHz
- Hfemin
- 100
- Terminal Kaplaması
- Matte Tin (Sn)
- Additional Feature
- BUILT IN BIAS RESISTOR
- Element Configuration
- Dual
- Max Power Dissipation
- 150mW
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