Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2V @ 1mA
- Uzunluk
- 1.6mm
- Element Configuration
- Dual
- Yayın Yılı
- 2013
- Terminal Sayısı
- 6
- Contact Plating
- Tin
- Transistor Application
- SWITCHING
- Fet Feature
- Logic Level Gate
- JESD-609 Kodu
- e3
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 19 Weeks
- Fet Type
- 2 P-Channel (Dual)
- Kılıf / Paket
- SOT-563, SOT-666
- Tepe Reflow Süresi (maks. sn)
- 40
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain Currentmax Abs Id
- 0.13A
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 150mW
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Ambalaj
- Tape & Reel (TR)
- Max Power Dissipation
- 150mW
- Pin Sayısı
- 6
- Pin Sayısı
- 6
- Drain To Source Breakdown Voltage
- -50V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Turn Off Delay Time
- 18 ns
- Continuous Drain Current Id
- 130mA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Weight
- 3.005049mg
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 15V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 10 ns
- Terminal Formu
- FLAT
- Rds On Max Id Vgs
- 10 Ω @ 100mA, 5V
- Drain To Source Voltage Vdss
- 50V
- Direnç
- 10Ohm
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