BSS84DW-7-F

Specifications

Akım Değeri

-130mA

Voltage Rated Dc

-50V

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

130mA

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Input Capacitance Ciss Max Vds

45pF @ 25V

Genişlik

1.35mm

Yükseklik

1mm

Transistor Application

SWITCHING

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

15 Weeks

Min Breakdown Voltage

50V

Vgsth Max Id

2V @ 1mA

Element Configuration

Dual

Uzunluk

2.2mm

Contact Plating

Tin

Yayın Yılı

2007

Ambalaj

Tape & Reel (TR)

Temel Parça No

BSS84DW

Fet Type

2 P-Channel (Dual)

Nominal Vgs

-1.6 V

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

40

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Number Of Channels

2

Terminal Formu

GULL WING

Turn On Delay Time

10 ns

Rds On Max Id Vgs

10 Ω @ 100mA, 5V

Direnç

10Ohm

Drain To Source Voltage Vdss

50V

Pin Sayısı

6

Turn Off Delay Time

18 ns

Drain To Source Breakdown Voltage

-50V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Weight

6.010099mg

Montaj

Surface Mount