Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 1mm
- Genişlik
- 1.35mm
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Input Capacitance Ciss Max Vds
- 50pF @ 25V
- Additional Feature
- HIGH RELIABILITY
- Akım Değeri
- 115mA
- Continuous Drain Current Id
- 115mA
- Current Continuous Drain Id25
- 115mA 130mA
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- BSS8402DW
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 40
- Nominal Vgs
- 2.5 V
- Fet Type
- N and P-Channel
- Fabrika Tedarik Süresi
- 16 Weeks
- Transistor Application
- SWITCHING
- Fet Feature
- Logic Level Gate
- JESD-609 Kodu
- e3
- Contact Plating
- Tin
- Yayın Yılı
- 2012
- Uzunluk
- 2.2mm
- Element Configuration
- Dual
- Vgsth Max Id
- 2.5V @ 250μA
- Parça Durumu
- Active
- Qualification Status
- Not Qualified
- Montaj Tipi
- Surface Mount
- Drain To Source Voltage Vdss
- 60V 50V
- Direnç
- 10Ohm
- Rds On Max Id Vgs
- 7.5 Ω @ 50mA, 5V
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 10 ns
- Number Of Channels
- 2
- Gate To Source Voltage Vgs
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Weight
- 6.010099mg
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