BAV5004LP-7B

Specifications

Contact Plating

Gold

Capacitance Vr F

2.5pF @ 0V 1MHz

Parça Durumu

Active

Terminal Pozisyonu

BOTTOM

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Element Configuration

Single

Forward Current

300mA

Peak Reverse Current

1μA

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Uzunluk

1.08mm

RoHS Durumu

ROHS3 Compliant

Operating Temperature Junction

-55°C~150°C

Reverse Recovery Time

50 ns

Max Repetitive Reverse Voltage Vrrm

400V

Number Of Elements

1

Diode Element Material

SILICON

Temel Parça No

BAV5004LP

Diode Type

Standard

JESD-609 Kodu

e4

Yükseklik

530μm

Speed

Fast Recovery =< 500ns, > 200mA (Io)

ECCN Kodu

EAR99

Current Average Rectified Io

300mA DC

Genişlik

675μm

Output Currentmax

0.3A

Pin Sayısı

2

Terminal Formu

NO LEAD

Current Reverse Leakage Vr

1μA @ 240V

Tepe Reflow Süresi (maks. sn)

40

Pin Sayısı

2

Max Junction Temperature Tj

150°C

Reference Standard

AEC-Q101

Max Forward Surge Current Ifsm

5A

Fabrika Tedarik Süresi

19 Weeks

Reverse Voltage

350V

Ambalaj

Cut Tape (CT)

Kurşunsuz Kodu

yes

Power Rating

350mW