B350AE-13

Specifications

Operating Temperature Junction

-55°C~150°C

Applications

EFFICIENCY

Current Average Rectified Io

2A

Diode Element Material

SILICON

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Number Of Phases

1

Terminal Formu

C BEND

Jesd30 Code

R-PDSO-C2

Terminal Sayısı

2

Voltage Dc Reverse Vr Max

50V

Diode Type

Schottky

Reverse Currentmax

100μA

Current Reverse Leakage Vr

100μA @ 50V

Kılıf / Paket

DO-214AC, SMA

Terminal Kaplaması

Matte Tin (Sn)

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

150°C

Capacitance Vr F

125pF @ 4V 1MHz

Tepe Reflow Sıcaklığı (°C)

260

Output Currentmax

3A

Number Of Elements

1

Breakdown Voltagemin

50V

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE

Rep Pk Reverse Voltagemax

50V

Reverse Test Voltage

50V

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

RoHS Durumu

ROHS3 Compliant

Voltage Forward Vf Max If

650mV @ 2A

Parça Durumu

Obsolete

Terminal Pozisyonu

DUAL

Nonrep Pk Forward Currentmax

80A