B1100AE-13

Specifications

Terminal Sayısı

2

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Element Material

SILICON

Yüzey Montaj

YES

Output Currentmax

1A

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

30

Operating Temperature Junction

-55°C~150°C

Fabrika Tedarik Süresi

8 Weeks

Capacitance Vr F

27pF @ 4V 1MHz

Voltage Dc Reverse Vr Max

100V

Terminal Kaplaması

Matte Tin (Sn)

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Reverse Leakage Vr

200μA @ 100V

Operating Temperature Max

150°C

Configuration

SINGLE

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete

Jesd30 Code

R-PDSO-C2

Kılıf / Paket

DO-214AC, SMA

HTS Kodu

8541.10.00.80

Rep Pk Reverse Voltagemax

100V

Terminal Formu

C BEND

Tepe Reflow Sıcaklığı (°C)

260

Number Of Elements

1

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Voltage Forward Vf Max If

790mV @ 1A

Additional Feature

FREE WHEELING DIODE, LOW POWER LOSS

Current Average Rectified Io

1A

Diode Type

Schottky