DMTH10H017LPDQ-13

Specifications

Maks. Çalışma Sıcaklığı

+ 175 C

Vds Drainsource Breakdown Voltage

100 V

Power Max

1.5W (Ta), 93W (Tc)

Tedarikçi Cihaz Paketi

PowerDI5060-8 (Type E)

Vgsth Max Id

3V @ 250µA

Montaj Stili

SMD/SMT

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Typical Turnon Delay Time

9.8 ns

Vgs Gatesource Voltage

- 20 V, + 20 V

Gate Charge Qg Max Vgs

28.6nC @ 10V

Current Continuous Drain Id25

13A (Ta), 59A (Tc)

Rds On Max Id Vgs

17.4mOhm @ 17A, 10V

Fet Type

2 N-Channel (Dual)

Qg Gate Charge

28.6 nC

Montaj Tipi

Surface Mount

Fet Feature

Standard

Transistor Type

1 N-Channel

Paket

Tape & Reel (TR)

Drain To Source Voltage Vdss

100V

Temel Ürün No

DMTH10H017

Birim Ağırlık

0.003422 oz

Channel Type

Dual N

Channel Mode

Enhancement

Input Capacitance Ciss Max Vds

1986pF @ 50V

Typical Turnoff Delay Time

32.6 ns

Technology

Si

Rise Time

16.3 ns

Ürün Tipi

MOSFET

Number Of Channels

2 Channel

Rds On Drainsource Resistance

17.4 mOhms

Ürün Durumu

Active

Kılıf / Paket

PowerDI5060-8

Ambalaj

Cut Tape

Seri

Automotive, AEC-Q101

Pd Power Dissipation

1.5 W

Configuration

Dual

Minimum Operating Temperature

- 55 C

Fabrika Paket Adedi

2500

Vgs Th Gatesource Threshold Voltage

3 V

Transistor Polarity

N-Channel