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C3 ChipZentronix
S29PL064J70BAI120

Cypress Semiconductor Corp

S29PL064J70BAI120

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Çalışma Sıcaklığı
-40°C~85°C TA
Fonksiyon Sayısı
1
Nem Hassasiyeti (MSL)
3 (168 Hours)
Tepe Reflow Süresi (maks. sn)
30
Memory Width
16
Access Time Max
70 ns
JESD-609 Kodu
e0
Page Size
8words
Toggle Bit
YES
Boot Block
BOTTOM/TOP
Terminal Pozisyonu
BOTTOM
Maks. Oturma Yüksekliği
1mm
Standby Currentmax
0.000005A
Command User Interface
YES
Pin Sayısı
48
Supply Currentmax
0.07mA
Data Polling
YES
Memory Size
64Mb 4M x 16
Terminal Adımı
0.8mm
Power Supplies
3/3.3V
Common Flash Interface
YES
Kılıf / Paket
48-VFBGA
Memory Interface
Parallel
Programming Voltage
3V
Montaj Tipi
Surface Mount
Ambalaj
Tray
Memory Density
67108864 bit
Besleme Gerilimi
2.7V~3.6V
Besleme Gerilimi
3V
Write Cycle Time Word Page
70ns
Memory Types
Non-Volatile
Parça Durumu
Obsolete
Seri
PL-J
Qualification Status
Not Qualified
Terminal Sayısı
48
Organization
4MX16
Yayın Yılı
2013
Number Of Sectorssize
16126
Uzunluk
8.15mm
Supply Voltagemax Vsup
3.6V

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