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C3 ChipZentronix
S29GL512T11TFIV10

Cypress Semiconductor Corp

S29GL512T11TFIV10

Memory

RoHS: Compliant

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Compliant

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Specifications

Seri
GL-T
Parça Durumu
Active
Memory Types
Non-Volatile
Write Cycle Time Word Page
60ns
Supply Voltagemin Vsup
2.7V
RoHS Durumu
ROHS3 Compliant
Alternate Memory Width
8
Terminal Sayısı
56
Montaj Tipi
Surface Mount
Ambalaj
Tray
Programming Voltage
2.7V
Genişlik
14mm
Memory Interface
Parallel
Kılıf / Paket
56-TFSOP (0.724, 18.40mm Width)
Jesd30 Code
R-PDSO-G56
Besleme Gerilimi
3V
Besleme Gerilimi
1.65V~3.6V
Access Time
110ns
Memory Density
536870912 bit
HTS Kodu
8542.32.00.51
Memory Size
512Mb 64M x 8
Terminal Adımı
0.5mm
Yüzey Montaj
YES
Supply Voltagemax Vsup
3.6V
Maks. Oturma Yüksekliği
1.2mm
Terminal Pozisyonu
DUAL
Fabrika Tedarik Süresi
13 Weeks
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Width
16
Yayın Yılı
2014
Nem Hassasiyeti (MSL)
3 (168 Hours)
Organization
32MX16
Fonksiyon Sayısı
1
Çalışma Sıcaklığı
-40°C~85°C TA
Uzunluk
18.4mm

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