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C3 ChipZentronix
S29GL512T11FHIV20

Cypress Semiconductor Corp

S29GL512T11FHIV20

Memory

RoHS: Compliant

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Compliant

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Specifications

Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Memory Size
512Mb 64M x 8
Terminal Adımı
1mm
Yüzey Montaj
YES
Supply Voltagemax Vsup
3.6V
Maks. Oturma Yüksekliği
1.4mm
Terminal Pozisyonu
BOTTOM
Fabrika Tedarik Süresi
13 Weeks
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Memory Width
16
Tepe Reflow Süresi (maks. sn)
30
Yayın Yılı
2003
Nem Hassasiyeti (MSL)
3 (168 Hours)
Organization
32MX16
Fonksiyon Sayısı
1
Çalışma Sıcaklığı
-40°C~85°C TA
Uzunluk
13mm
JESD-609 Kodu
e1
Seri
GL-T
Parça Durumu
Active
Memory Types
Non-Volatile
Write Cycle Time Word Page
60ns
Supply Voltagemin Vsup
2.7V
RoHS Durumu
ROHS3 Compliant
Alternate Memory Width
8
Terminal Sayısı
64
Montaj Tipi
Surface Mount
Ambalaj
Tray
Tepe Reflow Sıcaklığı (°C)
260
Programming Voltage
2.7V
Genişlik
11mm
Memory Interface
Parallel
Kılıf / Paket
64-LBGA
Jesd30 Code
R-PBGA-B64
Besleme Gerilimi
3V
Access Time
110ns
Besleme Gerilimi
1.65V~3.6V
HTS Kodu
8542.32.00.51
Memory Density
536870912 bit

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