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C3 ChipZentronix
S29GL512T11DHV010

Cypress Semiconductor Corp

S29GL512T11DHV010

Memory

RoHS: Compliant

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Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Supply Voltagemin Vsup
2.7V
Alternate Memory Width
8
Terminal Sayısı
64
Parça Durumu
Active
Seri
GL-T
Write Cycle Time Word Page
60ns
Memory Types
Non-Volatile
Besleme Gerilimi
3V
Access Time
110ns
Besleme Gerilimi
2.7V~3.6V
Memory Density
536870912 bit
HTS Kodu
8542.32.00.51
Programming Voltage
2.7V
Montaj Tipi
Surface Mount
Ambalaj
Tray
Genişlik
9mm
Kılıf / Paket
64-LBGA
Memory Interface
Parallel
Fabrika Tedarik Süresi
13 Weeks
Memory Format
FLASH
Operating Mode
ASYNCHRONOUS
Terminal Adımı
1mm
Memory Size
512Mb 64M x 8
Yüzey Montaj
YES
Pin Sayısı
64
Maks. Oturma Yüksekliği
1.4mm
Supply Voltagemax Vsup
3.6V
Terminal Pozisyonu
BOTTOM
Uzunluk
9mm
Memory Width
16
Organization
32MX16
Nem Hassasiyeti (MSL)
3 (168 Hours)
Çalışma Sıcaklığı
-40°C~105°C TA
Fonksiyon Sayısı
1

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