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C3 ChipZentronix
S29GL512T11DHB010

Cypress Semiconductor Corp

S29GL512T11DHB010

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Memory Width
16
Temperature Grade
INDUSTRIAL
Fonksiyon Sayısı
1
Organization
32MX16
Nem Hassasiyeti (MSL)
3 (168 Hours)
Uzunluk
9mm
Usage Level
Automotive grade
Access Time Max
110 ns
Operating Temperature Min
-40°C
Yüzey Montaj
YES
Terminal Adımı
1mm
Terminal Pozisyonu
BOTTOM
Maks. Oturma Yüksekliği
1.4mm
Supply Voltagemax Vsup
3.6V
Screening Level
AEC-Q100
Operating Mode
ASYNCHRONOUS
Fabrika Tedarik Süresi
13 Weeks
Programming Voltage
2.7V
Ambalaj
Tray
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Genişlik
9mm
Besleme Gerilimi
3V
Jesd30 Code
S-PBGA-B64
Additional Feature
CAN ALSO BE ORGANISED AS 512MX1
HTS Kodu
8542.32.00.51
Memory Density
536870912 bit
Operating Temperature Max
105°C
Parça Durumu
Active
Parallelserial
PARALLEL
RoHS Durumu
ROHS3 Compliant
Supply Voltagemin Vsup
2.7V
Terminal Sayısı
64
Memory Ic Type
FLASH
Terminal Formu
BALL
Alternate Memory Width
8

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