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C3 ChipZentronix
S29GL512T10FHI020

Cypress Semiconductor Corp

S29GL512T10FHI020

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Organization
32MX16
Nem Hassasiyeti (MSL)
3 (168 Hours)
Çalışma Sıcaklığı
-40°C~85°C TA
Fonksiyon Sayısı
1
Yayın Yılı
2015
Tepe Reflow Süresi (maks. sn)
30
Memory Width
16
JESD-609 Kodu
e1
Uzunluk
13mm
Maks. Oturma Yüksekliği
1.4mm
Supply Voltagemax Vsup
3.6V
Terminal Pozisyonu
BOTTOM
Terminal Adımı
1mm
Memory Size
512Mb 64M x 8
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Yüzey Montaj
YES
Fabrika Tedarik Süresi
13 Weeks
Memory Format
FLASH
Operating Mode
ASYNCHRONOUS
Genişlik
11mm
Kılıf / Paket
64-LBGA
Memory Interface
Parallel
Programming Voltage
2.7V
Tepe Reflow Sıcaklığı (°C)
260
Ambalaj
Tray
Montaj Tipi
Surface Mount
Access Time
100ns
Besleme Gerilimi
2.7V~3.6V
Memory Density
536870912 bit
HTS Kodu
8542.32.00.51
Jesd30 Code
R-PBGA-B64
Besleme Gerilimi
3V
Write Cycle Time Word Page
60ns
Memory Types
Non-Volatile
Parça Durumu
Active
Seri
GL-T
Alternate Memory Width
8
Terminal Sayısı
64
RoHS Durumu
ROHS3 Compliant
Supply Voltagemin Vsup
2.7V

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