+90 533 300 32 01
C3 ChipZentronix
S29GL512T10FHI010

Cypress Semiconductor Corp

S29GL512T10FHI010

Memory

RoHS: Compliant

Request a quote for pricing

Priced by quantity and lead time.

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Terminal Sayısı
64
Alternate Memory Width
8
RoHS Durumu
ROHS3 Compliant
Supply Voltagemin Vsup
2.7V
Write Cycle Time Word Page
60ns
Memory Types
Non-Volatile
Parça Durumu
Active
Seri
GL-T
HTS Kodu
8542.32.00.51
Memory Density
536870912 bit
Access Time
100ns
Besleme Gerilimi
2.7V~3.6V
Besleme Gerilimi
3V
Jesd30 Code
R-PBGA-B64
Kılıf / Paket
64-LBGA
Memory Interface
Parallel
Genişlik
11mm
Programming Voltage
2.7V
Montaj Tipi
Surface Mount
Ambalaj
Tray
Tepe Reflow Sıcaklığı (°C)
260
Memory Format
FLASH
Operating Mode
ASYNCHRONOUS
Fabrika Tedarik Süresi
13 Weeks
Terminal Pozisyonu
BOTTOM
Maks. Oturma Yüksekliği
1.4mm
Supply Voltagemax Vsup
3.6V
Yüzey Montaj
YES
Terminal Adımı
1mm
Memory Size
512Mb 64M x 8
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-609 Kodu
e1
Uzunluk
13mm
Çalışma Sıcaklığı
-40°C~85°C TA
Fonksiyon Sayısı
1
Organization
32MX16
Nem Hassasiyeti (MSL)
3 (168 Hours)
Yayın Yılı
2016
Tepe Reflow Süresi (maks. sn)
30
Memory Width
16

Related Products

  • Microchip Technology

    11AA010-I/MS

    Memory
  • Microchip Technology

    11AA010-I/P

    Memory
  • Microchip Technology

    11AA010-I/SN

    Memory
  • Microchip Technology

    11AA010-I/TO

    Memory
  • Microchip Technology

    11AA010T-I/MNY

    Memory
  • Microchip Technology

    11AA010T-I/MS

    Memory
  • Microchip Technology

    11AA010T-I/SN

    Memory
  • Microchip Technology

    11AA010T-I/TT

    Memory
  • Fast Delivery

    Same-day prep and shipping from stock

    Genuine Parts

    Sourced from authorized channels

    Datasheet

    Technical documents for each part

    Technical Support

    Help before and after the sale