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C3 ChipZentronix
S29GL512T10DHI023

Cypress Semiconductor Corp

S29GL512T10DHI023

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Memory Types
Non-Volatile
Write Cycle Time Word Page
60ns
Seri
GL-T
Parça Durumu
Active
Terminal Sayısı
64
Alternate Memory Width
8
Supply Voltagemin Vsup
2.7V
RoHS Durumu
ROHS3 Compliant
Memory Interface
Parallel
Kılıf / Paket
64-LBGA
Genişlik
9mm
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
Tepe Reflow Sıcaklığı (°C)
260
Programming Voltage
2.7V
Memory Density
536870912 bit
HTS Kodu
8542.32.00.51
Access Time
100ns
Besleme Gerilimi
2.7V~3.6V
Besleme Gerilimi
3V
Jesd30 Code
S-PBGA-B64
Terminal Pozisyonu
BOTTOM
Supply Voltagemax Vsup
3.6V
Maks. Oturma Yüksekliği
1.4mm
Yüzey Montaj
YES
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Memory Size
512Mb 64M x 8
Terminal Adımı
1mm
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Fabrika Tedarik Süresi
13 Weeks
Fonksiyon Sayısı
1
Çalışma Sıcaklığı
-40°C~85°C TA
Nem Hassasiyeti (MSL)
3 (168 Hours)
Organization
32MX16
Memory Width
16
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Yayın Yılı
2003
JESD-609 Kodu
e1
Uzunluk
9mm

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