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S29GL256S10DHB020

Cypress Semiconductor Corp

S29GL256S10DHB020

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Uzunluk
9mm
Memory Width
8
Yayın Yılı
2015
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fonksiyon Sayısı
1
Çalışma Sıcaklığı
-40°C~105°C TA
Nem Hassasiyeti (MSL)
3 (168 Hours)
Organization
32MX8
Operating Mode
ASYNCHRONOUS
Memory Format
FLASH
Fabrika Tedarik Süresi
13 Weeks
Pin Sayısı
64
Yüzey Montaj
YES
Terminal Adımı
1mm
Memory Size
256Mb 16M x 16
Terminal Pozisyonu
BOTTOM
Supply Voltagemax Vsup
3.6V
Maks. Oturma Yüksekliği
1.4mm
Besleme Gerilimi
3V
HTS Kodu
8542.32.00.51
Memory Density
268435456 bit
Access Time
100ns
Besleme Gerilimi
2.7V~3.6V
Montaj Tipi
Surface Mount
Ambalaj
Tray
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Programming Voltage
3V
Memory Interface
Parallel
Kılıf / Paket
64-LBGA
Genişlik
9mm
Supply Voltagemin Vsup
2.7V
RoHS Durumu
ROHS3 Compliant
Terminal Sayısı
64
Seri
Automotive, AEC-Q100, GL-S
Parça Durumu
Active
Write Cycle Time Word Page
60ns
Memory Types
Non-Volatile

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