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C3 ChipZentronix
S29GL128S10FHSS10

Cypress Semiconductor Corp

S29GL128S10FHSS10

Memory

RoHS: Compliant

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Specifications

Pin Sayısı
64
Memory Interface
Parallel
Write Cycle Time Word Page
60ns
Fabrika Tedarik Süresi
13 Weeks
Montaj Tipi
Surface Mount
Programming Voltage
3V
Nem Hassasiyeti (MSL)
3 (168 Hours)
Besleme Gerilimi
2.7V~3.6V
Çalışma Sıcaklığı
0°C~85°C TA
Memory Size
128Mb 8M x 16
Parça Durumu
Active
Memory Format
FLASH
RoHS Durumu
ROHS3 Compliant
Memory Types
Non-Volatile
Access Time
100ns
Kılıf / Paket
64-LBGA
Ambalaj
Tray
Seri
GL-S

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