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C3 ChipZentronix
S29GL128S10DHB023

Cypress Semiconductor Corp

S29GL128S10DHB023

Memory

RoHS: Compliant

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Compliant

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Specifications

Fonksiyon Sayısı
1
Access Time
100ns
Kılıf / Paket
64-LBGA
Memory Width
8
Memory Format
FLASH
Terminal Adımı
1mm
Maks. Oturma Yüksekliği
1.4mm
Montaj Tipi
Surface Mount
Çalışma Sıcaklığı
-40°C~105°C TA
Operating Mode
ASYNCHRONOUS
Nem Hassasiyeti (MSL)
3 (168 Hours)
Besleme Gerilimi
2.7V~3.6V
Memory Size
128Mb 8M x 16
Usage Level
Automotive grade
Terminal Pozisyonu
BOTTOM
Memory Interface
Parallel
Write Cycle Time Word Page
60ns
Tepe Reflow Sıcaklığı (°C)
260
Screening Level
AEC-Q100
Memory Types
Non-Volatile
Genişlik
9mm
Ambalaj
Tape & Reel (TR)
Seri
GL-S
Parça Durumu
Active
Memory Density
134217728 bit
Organization
16MX8
Yüzey Montaj
YES
JESD-609 Kodu
e1
Supply Voltagemax Vsup
3.6V
RoHS Durumu
ROHS3 Compliant
HTS Kodu
8542.32.00.51
Uzunluk
9mm
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fabrika Tedarik Süresi
16 Weeks
Programming Voltage
3V
Pin Sayısı
64
Supply Voltagemin Vsup
2.7V
Terminal Sayısı
64
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Besleme Gerilimi
3V

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