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C3 ChipZentronix
S29GL01GT11FHIV10

Cypress Semiconductor Corp

S29GL01GT11FHIV10

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Memory Format
FLASH
Terminal Adımı
1mm
Memory Width
16
Access Time
110ns
Fonksiyon Sayısı
1
Kılıf / Paket
64-LBGA
Memory Interface
Parallel
Write Cycle Time Word Page
60ns
Terminal Pozisyonu
BOTTOM
Operating Mode
ASYNCHRONOUS
Nem Hassasiyeti (MSL)
3 (168 Hours)
Besleme Gerilimi
1.65V~3.6V
Çalışma Sıcaklığı
-40°C~85°C TA
Montaj Tipi
Surface Mount
Memory Size
1Gb 128M x 8
Maks. Oturma Yüksekliği
1.4mm
Supply Voltagemax Vsup
3.6V
Yayın Yılı
2016
RoHS Durumu
ROHS3 Compliant
Parça Durumu
Active
Memory Density
1073741824 bit
Organization
64MX16
JESD-609 Kodu
e1
Yüzey Montaj
YES
Genişlik
11mm
Jesd30 Code
R-PBGA-B64
Ambalaj
Tray
Seri
GL-T
Tepe Reflow Sıcaklığı (°C)
260
Memory Types
Non-Volatile
Supply Voltagemin Vsup
2.7V
Terminal Sayısı
64
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Besleme Gerilimi
3V
Programming Voltage
2.7V
HTS Kodu
8542.32.00.51
Uzunluk
13mm
Tepe Reflow Süresi (maks. sn)
30
Fabrika Tedarik Süresi
13 Weeks

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