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C3 ChipZentronix
S29GL01GT10FHI010

Cypress Semiconductor Corp

S29GL01GT10FHI010

Memory

RoHS: Compliant

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Specifications

Terminal Pozisyonu
BOTTOM
Memory Interface
Parallel
Write Cycle Time Word Page
60ns
Maks. Oturma Yüksekliği
1.4mm
Montaj Tipi
Surface Mount
Çalışma Sıcaklığı
-40°C~85°C TA
Operating Mode
ASYNCHRONOUS
Besleme Gerilimi
2.7V~3.6V
Nem Hassasiyeti (MSL)
3 (168 Hours)
Memory Size
1Gb 128M x 8
Memory Width
16
Memory Format
FLASH
Terminal Adımı
1mm
Access Time
100ns
Fonksiyon Sayısı
1
Kılıf / Paket
64-LBGA
Supply Voltagemin Vsup
2.7V
Besleme Gerilimi
3V
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Sayısı
64
HTS Kodu
8542.32.00.51
Uzunluk
13mm
Tepe Reflow Süresi (maks. sn)
30
Fabrika Tedarik Süresi
13 Weeks
Programming Voltage
2.7V
Parça Durumu
Active
Memory Density
1073741824 bit
Organization
64MX16
JESD-609 Kodu
e1
Yüzey Montaj
YES
Supply Voltagemax Vsup
3.6V
Yayın Yılı
2016
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Sıcaklığı (°C)
260
Memory Types
Non-Volatile
Jesd30 Code
R-PBGA-B64
Genişlik
11mm
Seri
GL-T
Ambalaj
Tray

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