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C3 ChipZentronix
S29GL01GS11DHB010

Cypress Semiconductor Corp

S29GL01GS11DHB010

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Terminal Pozisyonu
BOTTOM
Memory Interface
Parallel
Write Cycle Time Word Page
60ns
Maks. Oturma Yüksekliği
1.4mm
Besleme Gerilimi
2.7V~3.6V
Nem Hassasiyeti (MSL)
3 (168 Hours)
Operating Mode
ASYNCHRONOUS
Çalışma Sıcaklığı
-40°C~105°C TA
Montaj Tipi
Surface Mount
Memory Size
1Gb 64M x 16
Memory Width
8
Memory Format
FLASH
Terminal Adımı
1mm
Access Time
110ns
Fonksiyon Sayısı
1
Kılıf / Paket
64-LBGA
Supply Voltagemin Vsup
2.7V
Terminal Sayısı
64
Besleme Gerilimi
3V
HTS Kodu
8542.32.00.51
Uzunluk
9mm
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fabrika Tedarik Süresi
13 Weeks
Programming Voltage
3V
Parça Durumu
Active
Memory Density
1073741824 bit
Organization
128MX8
Yüzey Montaj
YES
Supply Voltagemax Vsup
3.6V
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Memory Types
Non-Volatile
Genişlik
9mm
Jesd30 Code
S-PBGA-B64
Ambalaj
Tray
Seri
Automotive, AEC-Q100, GL-S

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