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C3 ChipZentronix
S25FS512SAGNFV010

Cypress Semiconductor Corp

S25FS512SAGNFV010

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Çalışma Sıcaklığı
-40°C~105°C TA
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Adımı
1.27mm
Memory Size
512Mb 64M x 8
Yayın Yılı
2016
Memory Types
Non-Volatile
Maks. Oturma Yüksekliği
0.8mm
Supply Voltagemin Vsup
1.7V
Jesd30 Code
R-PDSO-N8
Nem Hassasiyeti (MSL)
3 (168 Hours)
Kılıf / Paket
8-WDFN Exposed Pad
Memory Width
4
Fabrika Tedarik Süresi
13 Weeks
Genişlik
6mm
Organization
128MX4
Supply Voltagemax Vsup
2V
Montaj Tipi
Surface Mount
Yüzey Montaj
YES
Parça Durumu
Active
Memory Density
536870912 bit
Clock Frequency
133MHz
Terminal Pozisyonu
DUAL
Uzunluk
8mm
Terminal Sayısı
8
Seri
FS-S
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Memory Interface
SPI - Quad I/O, QPI
Alternate Memory Width
2
HTS Kodu
8542.32.00.51
Memory Format
FLASH
Operating Mode
SYNCHRONOUS
Besleme Gerilimi
1.7V~2V
Parallelserial
SERIAL
Ambalaj
Tray
Fonksiyon Sayısı
1
RoHS Durumu
ROHS3 Compliant
Additional Feature
IT ALSO HAVE MEMORY WIDTH X1
Besleme Gerilimi
1.8V
Programming Voltage
1.8V

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