Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Besleme Gerilimi
- 3.135V~3.6V
- Çalışma Sıcaklığı
- -40°C~85°C TA
- Kurşunsuz
- Lead Free
- Memory Format
- SRAM
- Parça Durumu
- Active
- Output Characteristics
- 3-STATE
- Fabrika Tedarik Süresi
- 8 Weeks
- Kılıf / Paket
- 100-LQFP
- Memory Width
- 36
- Address Bus Width
- 18b
- JESD-609 Kodu
- e4
- Memory Interface
- Parallel
- Nominal Supply Current
- 180mA
- Density
- 9 Mb
- Pin Sayısı
- 100
- Syncasync
- Synchronous
- Memory Types
- Volatile
- Yayın Yılı
- 2004
- Operating Supply Voltage
- 3.3V
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Montaj
- Surface Mount
- Io Type
- COMMON
- Terminal Sayısı
- 100
- Organization
- 256KX36
- Clock Frequency
- 166MHz
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Pozisyonu
- QUAD
- Temel Parça No
- CY7C1354
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Montaj Tipi
- Surface Mount
- Memory Size
- 9Mb 256K x 36
- Ambalaj
- Tape & Reel (TR)
- Access Time
- 3.5ns
- Number Of Ports
- 4
- Word Size
- 36b
- Seri
- NoBL™
- Terminal Adımı
- 0.635mm
- ECCN Kodu
- 3A991.B.2.A
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory