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C3 ChipZentronix
CY7C1315KV18-250BZXI

Cypress Semiconductor Corp

CY7C1315KV18-250BZXI

Memory

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Specifications

Fabrika Tedarik Süresi
6 Weeks
Output Characteristics
3-STATE
Tepe Reflow Süresi (maks. sn)
30
Parça Durumu
Active
Memory Format
SRAM
Kılıf / Paket
165-LBGA
Besleme Gerilimi
1.8V
Memory Width
36
Address Bus Width
17b
Çalışma Sıcaklığı
-40°C~85°C TA
Besleme Gerilimi
1.7V~1.9V
Pin Sayısı
165
Nominal Supply Current
590mA
Syncasync
Synchronous
Pin Sayısı
165
Density
18 Mb
Memory Types
Volatile
JESD-609 Kodu
e1
Memory Interface
Parallel
Supply Voltagemin Vsup
1.7V
Clock Frequency
250MHz
Terminal Pozisyonu
BOTTOM
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Radyasyon Dayanımı
No
Temel Parça No
CY7C1315
Maks. Oturma Yüksekliği
1.4mm
Nem Hassasiyeti (MSL)
3 (168 Hours)
Yayın Yılı
2003
Operating Supply Voltage
1.8V
Montaj
Surface Mount
Terminal Sayısı
165
Supply Voltagemax Vsup
1.9V
Tepe Reflow Sıcaklığı (°C)
260
Io Type
SEPARATE
Uzunluk
15mm
Access Time
450 ps
Ambalaj
Tray
Fonksiyon Sayısı
1
Word Size
36b
Number Of Ports
2

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