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C3 ChipZentronix
CY7C1262XV18-450BZXC

Cypress Semiconductor Corp

CY7C1262XV18-450BZXC

Memory

In StockRoHS: Compliant

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Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Supply Voltagemin Vsup
1.7V
Memory Interface
Parallel
JESD-609 Kodu
e1
Memory Types
Volatile
Density
36 Mb
Syncasync
Synchronous
Pin Sayısı
165
Pin Sayısı
165
Additional Feature
PIPELINED ARCHITECTURE
Besleme Gerilimi
1.7V~1.9V
Çalışma Sıcaklığı
0°C~70°C TA
Besleme Gerilimi
1.8V
Memory Width
18
Address Bus Width
20b
Kılıf / Paket
165-LBGA
Parça Durumu
Active
Memory Format
SRAM
Fabrika Tedarik Süresi
8 Weeks
Output Characteristics
3-STATE
Tepe Reflow Süresi (maks. sn)
30
Memory Size
36Mb 2M x 18
Montaj Tipi
Surface Mount
Standby Voltagemin
1.7V
RoHS Durumu
ROHS3 Compliant
Terminal Adımı
1mm
Word Size
18b
Number Of Ports
2
Fonksiyon Sayısı
1
Access Time
450 ps
Ambalaj
Tray
Uzunluk
15mm
Io Type
SEPARATE
Tepe Reflow Sıcaklığı (°C)
260
Terminal Sayısı
165
Supply Voltagemax Vsup
1.9V
Montaj
Surface Mount
Yayın Yılı
2003
Operating Supply Voltage
1.8V
Nem Hassasiyeti (MSL)
3 (168 Hours)
Maks. Oturma Yüksekliği
1.4mm

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