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C3 ChipZentronix
CY7C1061GE30-10ZSXI

Cypress Semiconductor Corp

CY7C1061GE30-10ZSXI

Memory

In StockRoHS: Compliant

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Specifications

Kılıf / Paket
54-TSOP (0.400, 10.16mm Width)
Memory Format
SRAM
Jesd30 Code
R-PDSO-G54
Parça Durumu
Active
Tepe Reflow Süresi (maks. sn)
30
Fabrika Tedarik Süresi
13 Weeks
Memory Width
16
Besleme Gerilimi
3V
Besleme Gerilimi
2.2V~3.6V
Çalışma Sıcaklığı
-40°C~85°C TA
Memory Types
Volatile
JESD-609 Kodu
e3
Genişlik
10.16mm
Supply Voltagemin Vsup
2.2V
HTS Kodu
8542.32.00.41
Memory Interface
Parallel
Terminal Pozisyonu
DUAL
Terminal Kaplaması
Matte Tin (Sn)
Organization
1MX16
Temel Parça No
CY7C1061
Yayın Yılı
2012
Nem Hassasiyeti (MSL)
3 (168 Hours)
Memory Density
16777216 bit
Write Cycle Time Word Page
10ns
Maks. Oturma Yüksekliği
1.2mm
Tepe Reflow Sıcaklığı (°C)
260
Supply Voltagemax Vsup
3.6V
Terminal Sayısı
54
Fonksiyon Sayısı
1
Ambalaj
Tray
Uzunluk
22.415mm
Terminal Adımı
0.8mm
ECCN Kodu
3A991.B.2.A
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Memory Size
16Mb 1M x 16
Yüzey Montaj
YES
Access Time Max
10 ns

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