Volume pricing
- 1+ pcs$0.66
- 10+ pcs$0.62
- 100+ pcs$0.59
- 500+ pcs$0.55
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Supply Voltagemin Vsup
- 3V
- Memory Interface
- Parallel
- JESD-609 Kodu
- e1
- Genişlik
- 7mm
- Memory Types
- Volatile
- Density
- 4 Mb
- Pin Sayısı
- 48
- Syncasync
- Asynchronous
- Yükseklik
- 210μm
- Nominal Supply Current
- 100mA
- Pin Sayısı
- 48
- Kurşunsuz
- Lead Free
- Besleme Gerilimi
- 3V~3.6V
- Çalışma Sıcaklığı
- -40°C~85°C TA
- Frekans
- 1MHz
- Besleme Gerilimi
- 3.3V
- Address Bus Width
- 18b
- Kılıf / Paket
- 48-TFBGA
- Memory Format
- SRAM
- Parça Durumu
- Discontinued
- Tepe Reflow Süresi (maks. sn)
- 20
- Output Characteristics
- 3-STATE
- Montaj Tipi
- Surface Mount
- Memory Size
- 4Mb 256K x 16
- RoHS Durumu
- ROHS3 Compliant
- Standby Voltagemin
- 3V
- Terminal Adımı
- 0.75mm
- Number Of Ports
- 1
- Word Size
- 16b
- Fonksiyon Sayısı
- 1
- Ambalaj
- Tray
- Uzunluk
- 8.5mm
- Io Type
- COMMON
- Tepe Reflow Sıcaklığı (°C)
- 260
- Supply Voltagemax Vsup
- 3.6V
- Terminal Sayısı
- 48
- Montaj
- Surface Mount
- Operating Supply Voltage
- 3.3V
- Yayın Yılı
- 1996
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory