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C3 ChipZentronix
CY62167GE30-45BVXI

Cypress Semiconductor Corp

CY62167GE30-45BVXI

Memory

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Yayın Yılı
2011
Supply Voltagemax Vsup
3.6V
Tepe Reflow Sıcaklığı (°C)
260
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Montaj Tipi
Surface Mount
Syncasync
Asynchronous
Montaj
Surface Mount
Uzunluk
8mm
Nem Hassasiyeti (MSL)
3 (168 Hours)
Ambalaj
Tray
Tepe Reflow Süresi (maks. sn)
30
Memory Size
16Mb 2M x 8 1M x 16
Terminal Sayısı
48
Kurşunsuz
Lead Free
Supply Voltagemin Vsup
2.2V
Çalışma Sıcaklığı
-40°C~85°C TA
Number Of Ports
1
Terminal Adımı
0.75mm
Temel Parça No
CY62167
Terminal Pozisyonu
BOTTOM
Seri
MoBL®
Density
16 Mb
Kılıf / Paket
48-VFBGA
Fabrika Tedarik Süresi
13 Weeks
Address Bus Width
20b
Memory Format
SRAM
JESD-609 Kodu
e1
Write Cycle Time Word Page
45ns
Memory Width
16
Operating Supply Voltage
3V
Word Size
16b
Memory Interface
Parallel
Besleme Gerilimi
3V
Besleme Gerilimi
2.2V~3.6V
Fonksiyon Sayısı
1
RoHS Durumu
ROHS3 Compliant
Memory Types
Volatile
Access Time Max
45 ns
Parça Durumu
Active
Alternate Memory Width
8

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