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C3 ChipZentronix
CY14B104NA-BA45XI

Cypress Semiconductor Corp

CY14B104NA-BA45XI

Memory

RoHS: Compliant

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Compliant

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Specifications

Density
4 Mb
Memory Format
NVSRAM
Ambalaj
Tray
Nominal Supply Current
52mA
Besleme Gerilimi
3V
Contact Plating
Copper, Silver, Tin
Tepe Reflow Sıcaklığı (°C)
260
Memory Width
16
Terminal Sayısı
48
Temel Parça No
CY14B104
Memory Interface
Parallel
Maks. Oturma Yüksekliği
1.2mm
ECCN Kodu
3A991.B.2.A
Data Bus Width
16b
Memory Size
4Mb 256K x 16
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Supply Voltage
3V
Write Cycle Time Word Page
45ns
Yayın Yılı
2011
Terminal Pozisyonu
BOTTOM
Uzunluk
10mm
Organization
256KX16
Pin Sayısı
48
Besleme Gerilimi
2.7V~3.6V
JESD-609 Kodu
e1
Fonksiyon Sayısı
1
Tepe Reflow Süresi (maks. sn)
30
Access Time Max
45 ns
Fabrika Tedarik Süresi
12 Weeks
Çalışma Sıcaklığı
-40°C~85°C TA
Supply Voltagemin Vsup
2.7V
Kılıf / Paket
48-TFBGA
Radyasyon Dayanımı
No
Montaj
Surface Mount
Word Size
16b
Standby Currentmax
0.005A
Parça Durumu
Active
Memory Types
Non-Volatile
Pin Sayısı
48
RoHS Durumu
ROHS3 Compliant

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