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CY14B104LA-BA25XI

Cypress Semiconductor Corp

CY14B104LA-BA25XI

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Parça Durumu
Active
Memory Types
Non-Volatile
Word Size
8b
Montaj
Surface Mount
Standby Currentmax
0.005A
Terminal Adımı
0.75mm
Montaj Tipi
Surface Mount
HTS Kodu
8542.32.00.41
Supply Voltagemax Vsup
3.6V
RoHS Durumu
ROHS3 Compliant
Pin Sayısı
48
Nem Hassasiyeti (MSL)
3 (168 Hours)
Fonksiyon Sayısı
1
Access Time Max
25 ns
Tepe Reflow Süresi (maks. sn)
30
JESD-609 Kodu
e1
Kılıf / Paket
48-TFBGA
Radyasyon Dayanımı
No
Fabrika Tedarik Süresi
16 Weeks
Supply Voltagemin Vsup
2.7V
Çalışma Sıcaklığı
-40°C~85°C TA
Maks. Oturma Yüksekliği
1.2mm
ECCN Kodu
3A991.B.2.A
Data Bus Width
8b
Memory Size
4Mb 512K x 8
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Supply Voltage
3V
Memory Interface
Parallel
Temel Parça No
CY14B104
Pin Sayısı
48
Besleme Gerilimi
2.7V~3.6V
Write Cycle Time Word Page
25ns
Terminal Pozisyonu
BOTTOM
Yayın Yılı
2011
Organization
512KX8
Uzunluk
10mm
Nominal Supply Current
70mA
Memory Format
NVSRAM
Density
4 Mb
Ambalaj
Tray

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